IRF540N 2-3V Vgs N – Channel MosfetSKU 13012

Transistors & IC

IRF540N 2-3V Vgs N – Channel Mosfet

₹29

01 — About

What it does

The IRF540N N-Channel MOSFET is a power MOSFET for high-efficiency switching applications. It offers much lower on-resistance than bipolar transistors, making it ideal for PWM motor control, power switching, and high-current load driving.

Key features

  • N-Channel power MOSFET
  • Low RDS(on) (~0.077Ω)
  • 33A continuous drain current
  • 100V drain-source voltage
  • TO-220 package
  • High efficiency switching
  • Fast switching speed

Good to know

  • Logic-level gate drive may need pull-down resistor
  • Gate capacitance requires driver for high-frequency PWM
  • Heatsink needed for high continuous current
  • Add flyback diode for inductive loads
  • Switch fully on or off – avoid linear region for efficiency
  • Verify gate threshold voltage for your drive voltage

02 — Datasheet

Specifications

08
Type
N-Channel MOSFET
Max VDS
100V
Max ID
33A
RDS(on)
0.077Ω @ VGS=10V
VGS(th)
2-4V
Package
TO-220
Power Dissipation
130W (with heatsink)
Input Capacitance
~1700pF